Vishay Intertechnology’s new fourth-generation 650 VE Series power MOSFET is designed to deliver high efficiency and power density. Compared to previous-generation devices, the Siliconix n-channel SiHP054N65E reduces on-resistance by 48.2 per cent, while offering a 59 per cent lower resistance times gate charge.
With these devices, the company is addressing demand for efficiency and power density improvements in two stages of the power system architecture: power factor correction and subsequent DC/DC converter blocks. Typical applications include: servers, edge computing, and data storage; UPS; high intensity discharge lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051ohm at 10V results in a higher power rating for applications >2kW and lets the device address Open Compute Project’s Open Rack V3 (ORV3) standards.
Samples and production quantities are available now.