Seoul, Korea Samsung Electronics Co., Ltd. has completed the development of the industry’s first DDR4 DRAM module last month, using 30 nanometer (nm) class process technology.
The DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbits/s) at 1.2 V, compared to 1.35 V and 1.5-V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6 Gbits/s. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5-V DDR3 module, said Samsung.
“Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year,” said Dong Soo Jun, president, memory division, Samsung Electronics, in a statement. “The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application.”
The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data. By using new circuit architecture, Samsung’s DDR4 will be able to run from 1.6 Gbits/s up to 3.2 Gbits/s, compared to speeds of 1.6 Gbits/s for DDR3 and 800 Mbits/s for DDR2.
In December, Samsung provided 1.2-V 2 gigabyte (2GB) DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. The chip maker now plans to work with a number of server makers to help ensure completion of JEDEC standardization of DDR4 technologies in the second half of 2011.