Small-signal MOSFETS claim new RDS(on) benchmark

Eindhoven, Netherlands — NXP Semiconductors N.V. has launched a family of small-signal MOSFETs, claiming breakthrough low RDS(on) performance. The low RDS(on) P-Channel and N-Channel MOSFETs enable lower power consumption for consumer electronics applications such as notebooks, tablets, handsets, e-readers, set-top-boxes and LCD TVs.

The PMV16UN, one of the new N-Channel MOSFETs from NXP, delivers an ultra-low RDS(on) value — 18 mOhm max @VGS = 4.5 V — in a SOT23 package. The new family offers a 20 percent increase in power efficiency compared to previous Trench MOSFET generation types, said NXP.

These high-efficiency MOSFETs are available in SOT23 and SOT457 packages with a compact 3 x 3-mm footprint, allowing design engineers to replace larger package types with significantly smaller solutions offering similar or better on-resistance.

A total of 70 types of small-signal MOSFETs will be released in 2011.

Pricing: Available now for $1.20 in quantities of 1,000.
Resources: NXP Small-Signal MOSFET Portfolio