Don’t lose plasma power

Toshiba Electronics Europe has introduced a new range of high current, low loss discrete IGBTs designed to meet the power supply requirements of plasma display panels (PDPs). The new devices are said to improve power supply performance and efficiency, using IGBTs rather than MOSFETs in PDP sustain and energy recovery circuits.

Designated the GT30F121 and GT30G121, both models are supplied in an isolated TO-220SIS package using copper connectors rather than traditional aluminium bonding wire. Collector-emitter voltage ratings are 300 and 400V respectively. Maximum collector current rating is 120A for each device, while typical input capacitance is 1320pF.

Both products will operate with a junction temperature up to 150C and have a typical collector power dissipation of 35W at 25C.