Energy efficiency as standard

Digi-Key is now stocking Cree’s Gallium Nitride (GaN) HEMT transistors for general purpose microwave applications. Digi-Key’s portfolio of Cree offerings encompasses SiC power components, SiC MESFETs, high-brightness and high-power LEDs and now, GaN HEMT transistors. Available in power levels from 10 to 90W, Cree’s GaN HEMT transistors are ideal for microwave applications that require high efficiency, multi-octave bandwidth performance. High frequency performance to 6GHz, high gain and a small footprint are said to facilitate lighter and more energy efficient systems, often with fewer amplifier components.

Digi-Key president and COO, Mark Larson, commented: The purchasing community relies on us for product selection and availability of the most sought-after technologies. To that end, we are pleased to offer Cree’s GaN HEMT transistors.