International Rectifier has launched a series of 25V and 30V N-channel trench HEXFET power MOSFETs featuring enhanced switching performance for synchronous buck converter and battery protection. The new family of MOSFETs utilizes IRs proven silicon technology to deliver benchmark on-state resistance (RDS(on)) and improved switching performance. The devices low conduction losses improve full-load efficiency and thermal performance while low switching losses help to achieve high efficiency even at light loads.
The new MOSFETs are also offered in a Power QFN package to provide improved power density when compared with an SO-8 package while keeping the same pin-out configuration. Depending upon application, the dual SO-8 MOSFETs allow a two for one exchange to reduce component count.
Single and dual N-channel MOSFETs are available. Single devices are offered in a PQFN 5x6mm and 3x3mm package optimized for high volume production in addition to D-PAK, I-PAK and SO-8 packages while dual devices are offered in an SO-8 package. The new devices are RoHS compliant and can be offered as Halogen free.