SemiSouth Laboratories, Inc. is pleased to announce its 30th US patent granted by the US Patent and Trademark Office. SemiSouth is an industry leader in designing and manufacturing silicon-carbide (SiC) power semiconductor transistors and diodes, which are rapidly gaining market share in the solar, UPS, traction, wind, automotive, and aerospace industries for their superior performance in high-efficiency, harsh-environment power applications.
US Patent 8,169,022 was issued on May 1, 2012, and is entitled “Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making.” It was co-invented by Dr. Michael Mazzola, a co-founder of SemiSouth in 2000 when the company spun off of Mississippi State University.
“The underlying technology in this patent allows SemiSouth to fine tune their already performance-leading vertical channel junction field effect transistors and diodes to get ever closer to the unipolar theoretical limit. Customers can expect even better value from the products based on this patent,” said Mazzola. “We are excited to receive our 30th US patent,” said Dr. Jeffrey B. Casady, SemiSouth President & CTO and company co-founder. “Our technology is state-of-the-art in terms of performance per unit area. SemiSouth products deliver advanced, efficient, cost-effective power solutions that others cannot.” In addition to 30 US patents, SemiSouth possesses 24 patents internationally and has 204 applications pending worldwide.
For more information on SemiSouth, visit www.semisouth.com or call +1-662-324-7607.