StratEdge introduces laminate packages for high power GaN devices

StratEdge Corporation, leader in the design and production of high performance semiconductor packages for microwave, millimeter-wave, and high speed digital devices, introduces a new family of high power laminate packages at IMS2012 Booth #1625. The LL family of leaded laminate copper-moly-copper (CMC) base packages dissipates heat from high power compound semiconductor devices, such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC). These packages handle applications through 6 GHz for use in RF radios for communications, radar, and high power millimeter-wave signals.

The series includes two laminate power packages, both with a ratio of 1:3:1 CMC, which provides a good thermal match for alumina-based materials and a GaN chip. The LL802302 is 0.8″ (20.32mm) long x 0.39″ (9.91mm) wide with 2 leads and a raised lid with an epoxy seal. This is a flange package with a bolt hole on each end so the package can be bolted to the printed circuit board. The LL362302 is a flangeless, fully hermetic version of the LL802302 package, and has a flat ceramic lid. StratEdge offers both flange and flangeless styles to accommodate manufacturing processes to either bolt down or solder the package. Hermeticity is especially critical in aerospace and defense applications.

“StratEdge’s new laminate power packages solve thermal problems encountered when using GaN devices,” explained Tim Going, StratEdge president. “The excellent thermal conductivity of the CMC base enables use of GaN devices in high power applications, and the flange package facilitates manufacturing. StratEdge is continuing to develop packages to handle the requirements of today’s new materials and devices.”

IMS2012 is being held in The Palais de Congres, Montreal, Canada from June 19-21, 2012. Visit StratEdge at booth #1625 to discuss your packaging requirements.