New quad N and P channel MOSFETS

New quad N and P channel MOSFETS from Advanced Power Electronics Corp offer best combination of switching speed, on-resistance and price

Advanced Power Electronics Corp. (USA), a leading manufacturer of MOS power semiconductors for DC-DC power conversion applications, today announced new quad complementary N- and P-channel enhanced-mode MOSFETs that target full bridge applications such as servo and DC motors. Simple to drive and with a low on-resistance, the AP9930GM-HF-3 devices are available in a standard SO-8 package commonly used in surface mount industrial designs.

N-channel performance ratings include: Drain Source Voltage (VDS) of 30V; RDS(ON) of 33m?; and Continuous Drain Current (ID) of 5.5A. For the P-channel, VDS is -30V, RDS(ON) is 55m? and ID is      -4.1A. The package is halogen-free and compliant with both current RoHS and REACH environmental requirements for hazardous materials.

Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “These new quad MOSFETs provide designers with the best possible combination of fast switching, low on resistance and cost effectiveness.”

Full datasheets can be downloaded at