New high performance MOSFET from Advanced Power Electronics Corp. offers very low on-resistance

1113 APEC AP1A003GMT -HF-3 Nov 13Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has recently released the new AP1A003GMT-HF-3 power MOSFET with very low maximum on-resistance of only 0.99m? for use in high current load switching where a very low voltage drop across the MOSFET switch is required to minimise the conduction losses.

Provided in a PMPAK5x6 package with integrated thermal pad and with a standard SO-8 footprint compatible with other enhanced 5x6mm power packages, the AP1A003GMT-HF-3 power MOSFET features simple gate drive requirements, a breakdown voltage rating of 30V and a maximum drain-source current rating of 260A.

The AP1A003GMT-HF-3 power MOSFET is fully RoHS-compliant and BFR/halogen-free. Samples are available now.