Bourns has entered the insulated-gate bipolar transistor (IGBT) market with the company’s first high-efficiency 600/650V discrete product line co-packaged with a fast recovery diode.
Designed using advanced trench-gate field-stop technology that provides greater control of dynamic characteristics, the five new BID Series discrete IGBTs are engineered to deliver lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses compared to previous generation non-punch-through IGBTs. In addition, this structure provides a positive temperature coefficient that helps increase device longevity and reduce power requirements in high voltage and high current designs.
Because Bourns’ new IGBTs are available in thermally-efficient TO-252, TO-247 and TO-247N packages, these devices can provide a lower thermal resistance Rth(j-c), making them ideal solutions for switch-mode power supplies, uninterruptible power sources, induction heating and power factor correction applications.
Offering four voltage/current model options in 600V/5A, 600V/20A, 600V/30A and 650V/50A, BID Series discrete IGBTs have been tested and qualified according to JEDEC standards for power switching products.