Mosfets feature fast recovery body diodes

Magnachip has released a new family of 600V super junction metal oxide semiconductor field effect transistors consisting of nine products featuring proprietary design technology which provides specific on-resistance (RSP) reduction of about 10 per cent. The family is equipped with a fast recovery body diode which is designed to enhance system efficiency with reduced reverse recovery time and switching loss.

Applications include solar inverters, energy storage systems and uninterruptible power supply systems.

Magnachip’s CEO, YJ Kim, said: “Now that we have introduced these 600V SJ Mosfet products, we are aiming to unveil new 650V and 700V SJ Mosfet products with fast recovery body diode in the second half of 2023. These new Mosfets represent a notable achievement for the company and we will build upon this success to deliver next-generation power solutions for rapidly changing market requirements and customer expectations.”