Toshiba Electronics Europe has released a new RF single-pole, double-throw (SPDT) switch in a compact package, suitable for applications such as telecommunications base stations, industrial equipment, repeaters, consumer equipment and transceivers.
The new high-power RF SPDT switch (TCWA1225G) offers an input peak power of 46 dBm (@ 8dB PAR). This has been achieved by adopting Toshiba’s original CMOS process and optimising the internal switching circuitry. The CMOS process also reduces insertion loss to avoid lowering transmit power and receiver sensitivity. As a result, the insertion loss of the TCWA1225G is 0.6 dB (typ. @ 5GHz), around 10 per cent lower than competitive products.
Operating voltage is nominally 3.3V and power consumption is 50μA. Operating temperature range is -40 to 95oC. The TCWA1225G is housed in a wafer-level chip scale package (WCSP) measuring 1.9 by 1.9mm, giving a footprint around 10 per cent smaller than other devices.