Built on GaAIAs Surface Emitter and MQW Technologies, High-Speed Devices Offer Radiant Intensity to 82 mW/sr
Vishay Intertechnology, Inc. is broadening its optoelectronics portfolio with the introduction of two new 940 nm high-speed infrared emitting diodes in compact 3.2 mm by 2.51 mm by 1.2 mm clear SMD side-view packages. Based on GaAIAs surface emitter and multi quantum well (MQW) technologies, the VSMY14940 and VSMB14940 combine high radiant intensity and optical power with fast switching times.
With their extremely low profiles and narrow ± 9° angles of half intensity, the Vishay Semiconductors VSMY14940 and VSMB14940 are ideal for remote control applications in space-constrained end products, including mobile devices such as smartphones and tablets. In addition, the devices will serve as high-intensity emitters for light barriers and smoke detectors.
Based on GaAIAs surface emitter chip technology, the VSMY14940 offers extremely high radiant intensity to 82 mW/sr at a 70 mA drive current, fast switching times of 10 ns, and forward voltage of 1.48 V. In applications where lower intensity is needed, the VSMB14940 is built on GaAIAs MQW technology for a radiant intensity of 35 mW/sr, switching times of 15 ns, and low forward voltage of 1.33 V.
RoHS-compliant, halogen-free, and Vishay Green, the emitting diodes released today are lead (Pb)-free and are capable of lead-free soldering up to 260 °C. The devices ensure a shelf life of 168 hours and provide a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020.
Device Specification Table:
| Part # |
VSMY14940 |
VSMB14940 |
| Technology |
GaAIAs, surface emitter |
GaAIAs, MQW |
| Radiant intensity (mW/sr) |
82 |
35 |
| Radiant power (mW) |
40 |
28 |
| Forward voltage (V) |
1.48 |
1.33 |
| Switching time (ns) |
10 |
15 |
Samples and production quantities of the new infrared emitting diodes are available now, with leads times of 6 to 8 weeks for larger orders.