Vishay Intertechnology, Inc., today introduced the industry’s first 150 V n-channel MOSFET in the compact, thermally enhanced PowerPAK® SC-70 package. Offering the industry’s lowest on-resistance at 10 V in the 2 mm by 2 mm footprint area, the Vishay SiliconixSiA446DJ is designed to increase efficiency by reducing conduction and switching losses in a wide range of space-constrained applications.
The SiA446DJ is optimized for primary-side switching in isolated DC/DC converters, boost converters in LED backlighting, and synchronous rectification and load switching for power management applications in Power over Ethernet (PoE) PD switches, telecom DC/DC bricks, and portable electronic devices. For these applications, the PowerPAK SC-70 is 55 % smaller than the 3 mm by 2.8 mm TSOP-6 package while offering 40 % lower thermal resistance.
Built on ThunderFET® technology, the SiA446DJ offers low maximum on-resistance of 177 m? at 10 V, 185 m? at 7.5 V, and 250 m? at 6 V. At 10 V, the device’s on-resistance is 53 % lower than the previous-generation device in the TSOP-6 package, while its typical on-resistance times gate charge figure of merit at 10 V is 54 % lower for improved efficiency. Furthermore, the SiA446DJ offers 26 % lower on-resistance than the latest competing device in the 3 mm by 2.7 mm SOT-23 package.
Extending Vishay’s portfolio of medium-voltage MOSFETs in compact, thermally enhanced packages, the SiA446DJ joins the previously released 100 V SiA416DJ in the PowerPAK SC-70 and the 100 V SiB456DK in the PowerPAK SC-75. The device is RoHS-compliant, halogen-free, and 100 % RG– and UIS-tested.
Samples and production quantities of the SiA446DJ are available now, with lead times of 13 weeks for larger orders.