Rutronik is expanding its MOSFET portfolio with Infineon’s CoolMOS 8 series which follows on from the 600 V CoolMOS 7 MOSFET family, including the P7, S7, CFD7, C7, G7 and PFD7 types.
The products feature an integrated, fast body diode, advanced connection technology and extremely robust commutation and are partly installed in housings with surface cooling. They suit a range of power applications in the fields of telecommunications, EV charging technology and renewable energy. The devices are available in reel or tube packaging.
The company states performance includes particularly low switch-on resistance, achieving an increase in efficiency of 0.1 per cent compared to the C7 version and even 0.17 per cent compared to P7. As MOSFETs, they represent an innovation at system level with a thermal resistance (Rth) that is between 14 and 42 per cent lower, a low ringing tendency and simplified operation and integration.