Rutronik’s portfolio of power transistors includes Yageo XSemi power MOSFETs. These devices are characterized by low on-resistance and high switching speeds for various applications, including analog and digital circuits. In addition to their efficiency and cost-effectiveness, the XSemi series offers a variety of package options to help developers meet individual application requirements.
Example applications include: low-voltage systems; switching power supplies; surface-mount commercial/industrial; telecommunication systems; and consumer electronics.
Technical features include: SMD packages (TO-22, 25, 26 and SOT-23); RoHS compliant and halogen-free; low gate charge; and maximum operating temperature of 150°C.
Examples of channel type specifications include the following. N-Channel, 20 to 700 V drain-source voltage, up to 300 A leakage current, VGS at 10 V4. P-Channel, 20 to 700 V drain-source voltage, up to 300 A leakage current. Dual N-Channel, 100 V drain-source voltage, up to 2.1 A leakage current.
