Toshiba Expands Family of Ultra-Miniature Gate-Drive Photocouplers for IGBTs and Power MOSFETs

PrintToshiba Electronics Europe is offering two new low-profile IC output photocouplers for directly driving low- to medium-power IGBTs and power MOSFETs. The TLP5701 and TLP5702 are supplied in ultra-miniature SO6L package with dimensions of just 10mm x 3.8mm x 2.1mm.

Despite their small size, the new devices have a minimum isolation voltage rating of 5000Vrms and guaranteed creepage and clearance distances of 8mm. As a result they can be used to save space in designs that require safety standard certification. In addition the couplers offer guaranteed performance and specifications at temperatures ranging from -40°C to 110°C.

Potential applications for the new photocouplers will range from home appliances and inverters to factory automation and control equipment. The TLP5701 has a peak output current of ±0.6A and is optimised for low-power IGBTs and power MOSFETs. A peak output current of ±2.5A makes the TLP5702 ideal for driving medium-power devices.

Toshiba’s new couplers use the latest GaAlAs infrared LED and integrated high-gain, high-speed photodetector technology to deliver high-performance operation. An internal faraday shield ensures a guaranteed common-mode transient immunity of ±20kV/?s. Maximum propagation delay time is rated at 500ns for the TLP5701 and 200ns for the TLP5702.

The SO6L form factor is 54% the height of products that use a DIP8 package and requires just 43% the board mounting area.