Nexperia has introduced the PMCB60XN and PMCB60XNE 30V N-channel small-signal trench MOSFETs, said to offer market-leading RDS(on) in the ultra-compact wafer-level DSN1006 package, to make energy go further where space is tight and battery runtime is critical.
Ideal for smartphones, smart watches, hearing aids, and earphones, the new components support the trend towards greater intelligence and richer functionality that raise system power demand. With RDS(on) up to 25 per cent better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management. They also reduce self-heating, enhancing the comfort of wearable devices.
The PMCB60XN and PMCB60XNE have maximum RDS(on) of 50mΩ and 55mΩ respectively, at VGS=4.5V. This gives them the lowest on-resistance per die area among similar 30V MOSFETs. The PMCB60XNE comes with ESD protection rated to 2kV (human body model) integrated in a 1.0 by 0.6 by 0.2mm DSN1006 outline. Both MOSFETs are rated for drain current up to 4A.
nexperia.com